Semiconductor Grade Fused Quartz Plate
The Fused Quartz Plate is produced by continuous electrofusion method. It can be used in the semiconductor cleaning neighborhood instead of electrofused quartz ingot material.
Characteristics:
No micro-bubbles, no stray spots, easy to process, product size can be flexibly customized, high processing utilization rate.
Product Size(mm):
Width | Thickness | Length |
---|---|---|
550~650 | 50~70 | >1500 |
Chemical Properties(ppm):
Al | Ca | Cr | Cu | Fe | K | Li | Mg | Mn | Na | Ti | Zr | OH Content |
---|---|---|---|---|---|---|---|---|---|---|---|---|
8 | 0.6 | 0.05 | 0.01 | 0.10 | 0.1 | 0.2 | 0.05 | 0.05 | 0.10 | 1.3 | 1.0 | <30 |
Physical Properties:
Items | Values |
---|---|
Density (g/cm3) | 2.2 |
Heat Conductivity (w/m.k 1000°C) | 2.28 |
Coefficient of Thermal Expansion (°C-1 1000°C) | 5.5×10-7 |
Softening Point (°C) | 1670 |
Annealing Point (°C) | 1210 |
Strain Point (°C) | 1110 |